 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STS7PF30L P-CHANNEL 30V - 0.16 - 7A - SO-8 STripFETTM II Power MOSFET General features Type STS7PF30L VDSS 30V RDS(on) <0.021 ID 7A STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8 Description This Power MOSFET is the latest development of STMicroelectronics' unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing densisty for low on-resistance, rugged avalanche characteristics and less critical alignment steps, therefore a remarkable manufacturing reproducibility. Internal schematic diagram Applications BATTERY MANAGEMENT IN NOMADIC EQUIPMENT. BATTERY MANAGEMENT IN NOMADIC EQUIPMENT Order Codes Sales Type STS7PF30L Marking S7PF30L Package SO-8 Packaging TAPE & REEL November 2005 Rev 5 1/11 www.st.com 11 1 Electrical ratings STS7PF30L 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Drain-Source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20k) Gate-Source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Value 30 30 20 7 4.4 28 2.5 Unit V V V A A A W Symbol VDS VDGR VGS ID ID IDM Note 1 PTOT Table 2. Rthj-amb Note 2 Tj Tstg Thermal data Thermal Resistance Junction-ambient Operating Junction Temperature Storage Temperature Range 50 150 -55 to 150 C/W C C 2/11 STS7PF30L 2 Electrical characteristics 2 Electrical characteristics (TJ = 25 C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS On/off states Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate Body Leakage Current (VDS = 0) Gate Threshold Voltage Static Drain-Source On Resistance Test Conditions ID = 250A, V GS= 0 VDS = Max Rating, VDS = Max Rating, Tc=125C VDS = 16V VDS= VGS, ID = 250A VGS= 10 V, ID= 3.5A VGS= 4.5 V, ID = 3.5A 1 0.011 0.016 1.6 0.016 0.022 Min. 30 1 10 100 2.5 0.021 0.028 Typ. Max. Unit V A A nA V IGSS VGS(th) RDS(on) Table 4. Symbol gfs Note 3 Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward Transconductance Test Conditions VDS = 20V, ID= 3.5A Min. Typ. 16 2600 523 174 28 8.75 12.35 7 Max. Unit S pF pF pF nC nC nC Input Capacitance VDS = 25V, f = 1MHz, V GS =0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 15V, ID= 7A, VGS= 4.5V Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on Delay Time Rise Time Test Conditions VDD = 15V, ID = 3.5A RG= 4.7, VGS= 4.5V, (see Figure 13) VDD = 15V, ID = 3.5A RG= 4.7, VGS= 4.5V, (see Figure 13) Min. Typ. 68 54 Max. Unit ns ns Turn-off Delay Time Fall Time 65 23 ns ns 3/11 2 Electrical characteristics STS7PF30L Table 6. Symbol ISD Source-Drain Diode Parameter Test Conditions Min. Typ. Max. 7 28 ISD = 7A, V GS = 0 ISD = 7A, di/dt = 100A/s VDD = 15V, Tj = 150C (see Figure 15) 40 46 2.3 1.2 Unit A A V ns nC A Source-Drain Current ISDM Note 1 Source-Drain Current (pulsed) VSD trr Qrr IRRM Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current (1) Pulse with limited by safe operating area (2) When mounted on 1inch FR-4 board (t 10s) (3) Pulsed: pulse duration = 300s, duty cycle 1.5% Note: For the P-CHANNEL MOSFET the polarity of voltages and current have to be reversed 4/11 STS7PF30L 2 Electrical characteristics 2.1 Electrical characteristics (curves) Safe Operating Area Figure 2. Thermal Impedance Figure 1. Figure 3. Output Characteristics Figure 4. Transfer Characteristics Figure 5. Transconductance Figure 6. Static Drain-Source on Resistance 5/11 2 Electrical characteristics STS7PF30L Figure 7. Gate Charge vs Gate-Source Voltage Figure 8. Capacitance Variations Figure 9. Normalized Gate Threshold Voltage Figure 10. Normalized on Resistance vs vs Temperature Temperature Figure 11. Source-Drain Diode Forward Characteristics Figure 12. Normalized Breakdown Voltage vs Temperature 6/11 STS7PF30L 3 Test Circuits 3 Test Circuits Figure 14. Gate Charge Test Circuit Figure 13. Switching Times Test Circuit For Resistive Load Figure 15. Test Circuit For Inductive Load Switching and Diode Recovery Times 7/11 4 Package Mechanical Data STS7PF30L 4 Package Mechanical Data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STS7PF30L 4 Package Mechanical Data SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 9/11 5 Revision History STS7PF30L 5 Revision History Date 13-Dec-2003 25-Jun-2004 18-Jan-2005 29-Sep-2005 09-Nov-2005 Revision 1 2 3 4 5 First Issue Preliminary Data Modified value on table 5 Complete version New template Changes 10/11 STS7PF30L 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11 |
Price & Availability of STS7PF30L07
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |